Bain, S., Smith, D. (David C.), Wilson, Neil R. and Carrasco-Orozco, M. (2009) Kelvin force gradient microscopy of pBTTT transistors in both the linear and saturation electrical regimes. Applied Physics Letters, Vol.95 (No.14). article no. 143304 . doi:10.1063/1.3242001

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Abstract

Kelvin force gradient microscopy of pBTTT transistors biased in both the linear and saturation electrical regimes is presented. The linear regime potential profiles are dominated by the contacts and the true material mobility, 0.11 +/- 0.01 cm(2) V-1 s(-1), is ten times higher than that derived from device electrical characteristics. In the saturation regime the potential profiles are well fitted by a simple model assuming a very weakly gate potential dependent mobility in the range 0.021-0.028 cm(2) V-1 s(-1). These measurements indicate that contrary to the conclusion drawn from the device electrical characteristics, the linear mobility is larger than the saturation mobility. (C) 2009 American Institute of Physics. [doi:10.1063/1.3242001]

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Field-effect transistors, Thin film transistors
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	5 October 2009
Dates:	Date Event 5 October 2009 Published
Volume:	Vol.95
Number:	No.14
Number of Pages:	3
Page Range:	article no. 143304
DOI:	10.1063/1.3242001
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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