Sánchez, Ana M., Beanland, R., Hasbullah, N. F., Hopkinson, M. and David, J. P. R. (2009) Correlation between defect density and current leakage in InAs/GaAs quantum dot-in-well structures. Journal of Applied Physics, Vol.106 (No.2). Article no. 024502. doi:10.1063/1.3168492

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Abstract

We present a study of InAs/GaAs quantum dot-in-well (DWELL) material using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spacer layer, annealing temperature, defect density, and these leakage currents, with the most defective sample having 30 times more defects and a leakage current several orders of magnitude above that of the least defective. Cross section transmission electron microscope (TEM) shows that surface roughness above defective dots is responsible for the high defect densities. However, even in the best sample the reverse bias leakage current is several orders of magnitude above that typically seen in quantum well materials and a measurable density of defective dots are observed in planar view TEM. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3168492]

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Journal of Applied Physics
Publisher:	American Institute of Physics
ISSN:	0021-8979
Official Date:	15 July 2009
Dates:	Date Event 15 July 2009 Published
Volume:	Vol.106
Number:	No.2
Number of Pages:	4
Page Range:	Article no. 024502
DOI:	10.1063/1.3168492
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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