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Antimony diffusion in strained and relaxed Si1-xGex
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UNSPECIFIED (1997) Antimony diffusion in strained and relaxed Si1-xGex. In: International Conference on Diffusion in Materials (DIMAT 96), AUG 05-09, 1996, NORDKIRCHEN, GERMANY.
Full text not available from this repository.Abstract
Following our preliminary report of studies of antimony diffusion in silicon-germanium alloys [1], we now publish our full report of the diffusion profiles and our analysis together with TEM studies of the perfection of the Si1-xGex layers. The diffusion of antimony is characterised by a higher diffusivity in the alloy than in silicon from which we infer a higher vacancy mobility and/or vacancy concentration in Si1-xGex than in Si.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Journal or Publication Title: | DEFECT AND DIFFUSION FORUM |
| Publisher: | TRANS TECH-SCITEC PUBLICATIONS LTD |
| ISSN: | 1012-0386 |
| Date: | 1997 |
| Volume: | 143 |
| Number: | Part 2 |
| Number of Pages: | 4 |
| Page Range: | pp. 1131-1134 |
| Publication Status: | Published |
| Title of Event: | International Conference on Diffusion in Materials (DIMAT 96) |
| Location of Event: | NORDKIRCHEN, GERMANY |
| Date(s) of Event: | AUG 05-09, 1996 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/17551 |
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