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Peculiarities in the electron properties of delta(Sb)-layers in epitaxial silicon .3. Electron-phonon relaxation
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UNSPECIFIED (1997) Peculiarities in the electron properties of delta(Sb)-layers in epitaxial silicon .3. Electron-phonon relaxation. LOW TEMPERATURE PHYSICS, 23 (4). pp. 303-307. ISSN 1063-777X
Full text not available from this repository.Abstract
Complex studies of weak electron localization, electron-electron interaction, and electron overheating in Si crystals containing a delta(Sb)-layer with various concentrations of Sb atoms are carried out in order to obtain information on the characteristic times of inelastic electron relaxation. The temperature dependence of the electron-phonon relaxation time tau(ep) derived from the electron overheating effect can be described by the dependence tau(ep) proportional to T-P, where p congruent to 3.7 +/- 0.3, which corresponds to the case q(T)l < l (q(T) is the wave vector of the thermal phonon and l the electron mean free path). (C) 1997 American Institute of Physics.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | LOW TEMPERATURE PHYSICS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 1063-777X |
| Date: | April 1997 |
| Volume: | 23 |
| Number: | 4 |
| Number of Pages: | 5 |
| Page Range: | pp. 303-307 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/17588 |
Data sourced from Thomson Reuters' Web of Knowledge
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