Peculiarities in the electron properties of delta(Sb)-layers in epitaxial silicon .3. Electron-phonon relaxation
UNSPECIFIED (1997) Peculiarities in the electron properties of delta(Sb)-layers in epitaxial silicon .3. Electron-phonon relaxation. LOW TEMPERATURE PHYSICS, 23 (4). pp. 303-307. ISSN 1063-777XFull text not available from this repository.
Complex studies of weak electron localization, electron-electron interaction, and electron overheating in Si crystals containing a delta(Sb)-layer with various concentrations of Sb atoms are carried out in order to obtain information on the characteristic times of inelastic electron relaxation. The temperature dependence of the electron-phonon relaxation time tau(ep) derived from the electron overheating effect can be described by the dependence tau(ep) proportional to T-P, where p congruent to 3.7 +/- 0.3, which corresponds to the case q(T)l < l (q(T) is the wave vector of the thermal phonon and l the electron mean free path). (C) 1997 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||LOW TEMPERATURE PHYSICS|
|Publisher:||AMER INST PHYSICS|
|Number of Pages:||5|
|Page Range:||pp. 303-307|
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