Ellipsometry and Raman spectroscopy of MBE grown undoped Si-Si0.78Ge0.22/(001)Si superlattices
UNSPECIFIED (1997) Ellipsometry and Raman spectroscopy of MBE grown undoped Si-Si0.78Ge0.22/(001)Si superlattices. In: Conference on Material Science and Material Properties for Infrared Optoelectronics, SEP 30-OCT 02, 1996, UZHGOROD, UKRAINE.Full text not available from this repository.
Spectroscopic ellipsometry and Raman spectroscopy have been used to characterize Si/Si0.78Ge0.22 superlattices grown by molecular beam epitaxy at different substrate temperatures, 550 degrees C<T-S<810 degrees C. The results are interpreted to give information on material and interface quality, layer thicknesses, and slate of strain, and are in good agreement with XRD, SIMS and RES investigations. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those-calculated using Rytov's theory of acoustic vibrations in layered media.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Series Name:||PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE)|
|Journal or Publication Title:||MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS|
|Publisher:||SPIE - INT SOC OPTICAL ENGINEERING|
|Editor:||Sizov, FF and Tetyorkin, VV|
|Number of Pages:||7|
|Page Range:||pp. 216-222|
|Title of Event:||Conference on Material Science and Material Properties for Infrared Optoelectronics|
|Location of Event:||UZHGOROD, UKRAINE|
|Date(s) of Event:||SEP 30-OCT 02, 1996|
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