UNSPECIFIED (1997) Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A. In: 43rd American-Vacuum-Society Symposium, OCT 14-18, 1996, PHILADELPHIA, PA.

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Abstract

Strain relaxation during the growth of InAs thin films on GaAs substrates by molecular beam epitaxy has been studied by scanning tunneling microscopy (STM). A two-dimensional growth mode operates for InAs layers grown on both GaAs(110) and GaAs(111)A. Detailed STM profiles of the InAs surfaces reveal small relaxation phenomena that are related to the presence of misfit dislocations at the buried heterointerface. The origin of these surface features is discussed, and their utility in studying the relaxation of strained semiconductor thin films is demonstrated. (C) 1997 American Vacuum Society.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
Publisher:	AMER INST PHYSICS
ISSN:	0734-2101
Date:	May 1997
Volume:	15
Number:	3 Part 1
Number of Pages:	4
Page Range:	pp. 915-918
Publication Status:	Published
Title of Event:	43rd American-Vacuum-Society Symposium
Location of Event:	PHILADELPHIA, PA
Date(s) of Event:	OCT 14-18, 1996
URI:	http://wrap.warwick.ac.uk/id/eprint/17692

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