Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
UNSPECIFIED (1997) Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A. In: 43rd American-Vacuum-Society Symposium, PHILADELPHIA, PA, OCT 14-18, 1996. Published in: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 15 (3 Part 1). pp. 915-918.Full text not available from this repository.
Strain relaxation during the growth of InAs thin films on GaAs substrates by molecular beam epitaxy has been studied by scanning tunneling microscopy (STM). A two-dimensional growth mode operates for InAs layers grown on both GaAs(110) and GaAs(111)A. Detailed STM profiles of the InAs surfaces reveal small relaxation phenomena that are related to the presence of misfit dislocations at the buried heterointerface. The origin of these surface features is discussed, and their utility in studying the relaxation of strained semiconductor thin films is demonstrated. (C) 1997 American Vacuum Society.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS|
|Publisher:||AMER INST PHYSICS|
|Number:||3 Part 1|
|Number of Pages:||4|
|Page Range:||pp. 915-918|
|Title of Event:||43rd American-Vacuum-Society Symposium|
|Location of Event:||PHILADELPHIA, PA|
|Date(s) of Event:||OCT 14-18, 1996|
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