UNSPECIFIED (1997) Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices. In: European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices, JUN 04-07, 1996, STRASBOURG, FRANCE.

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Abstract

A variety of electrical measurements on the Si/Si1-xGex/Si heterostructure are surveyed. From these measurements it has been possible to deduce effective masses and their dependence on carrier sheet density, the density of heterointerface charge and the interface roughness parameters, and the deformation potential for acoustic phonon scattering. Same of this information is used in a discussion of the room temperature performance of a metal-oxide semiconductor gated enhancement mode device.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	THIN SOLID FILMS
Publisher:	ELSEVIER SCIENCE SA LAUSANNE
ISSN:	0040-6090
Date:	15 February 1997
Volume:	294
Number:	1-2
Number of Pages:	6
Page Range:	pp. 160-165
Publication Status:	Published
Title of Event:	European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices
Location of Event:	STRASBOURG, FRANCE
Date(s) of Event:	JUN 04-07, 1996
URI:	http://wrap.warwick.ac.uk/id/eprint/17795

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