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Thermoelectric power of the Si/Si0.8Ge0.2 two-dimensional hole gas
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UNSPECIFIED (1997) Thermoelectric power of the Si/Si0.8Ge0.2 two-dimensional hole gas. In: European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices, STRASBOURG, FRANCE, JUN 04-07, 1996. Published in: THIN SOLID FILMS, 294 (1-2). pp. 182-185. ISSN 0040-6090.
Full text not available from this repository, contact author.Abstract
The thermal conductivities and the thermoelectric powers of two-dimensional hole gases in fully strained Si/Si0.8Ge0.2 heterostructures have been measured for the first lime in the temperature range 3 K to 25 K, and for carrier sheet densities in the range 0.2 to 1 x 10(12) cm(-2). The thermopower is dominated by the phonon drag contribution and a fit to theory yields a value of 4.5 eV for the acoustic phonon deformation potential, with no other adjustable parameters. (C) 1997 Elsevier Science S.A.
| Item Type: | Conference Item (UNSPECIFIED) | ||||
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| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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| Journal or Publication Title: | THIN SOLID FILMS | ||||
| Publisher: | ELSEVIER SCIENCE SA LAUSANNE | ||||
| ISSN: | 0040-6090 | ||||
| Official Date: | 15 February 1997 | ||||
| Dates: |
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| Volume: | 294 | ||||
| Number: | 1-2 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 182-185 | ||||
| Publication Status: | Published | ||||
| Title of Event: | European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices | ||||
| Location of Event: | STRASBOURG, FRANCE | ||||
| Date(s) of Event: | JUN 04-07, 1996 |
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