UNSPECIFIED (1997) Thermoelectric power of the Si/Si0.8Ge0.2 two-dimensional hole gas. In: European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices, JUN 04-07, 1996, STRASBOURG, FRANCE.

Full text not available from this repository.

Abstract

The thermal conductivities and the thermoelectric powers of two-dimensional hole gases in fully strained Si/Si0.8Ge0.2 heterostructures have been measured for the first lime in the temperature range 3 K to 25 K, and for carrier sheet densities in the range 0.2 to 1 x 10(12) cm(-2). The thermopower is dominated by the phonon drag contribution and a fit to theory yields a value of 4.5 eV for the acoustic phonon deformation potential, with no other adjustable parameters. (C) 1997 Elsevier Science S.A.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	THIN SOLID FILMS
Publisher:	ELSEVIER SCIENCE SA LAUSANNE
ISSN:	0040-6090
Date:	15 February 1997
Volume:	294
Number:	1-2
Number of Pages:	4
Page Range:	pp. 182-185
Publication Status:	Published
Title of Event:	European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices
Location of Event:	STRASBOURG, FRANCE
Date(s) of Event:	JUN 04-07, 1996
URI:	http://wrap.warwick.ac.uk/id/eprint/17796

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item