UNSPECIFIED (1997) Thermoelectric power of the Si/Si0.8Ge0.2 two-dimensional hole gas. In: European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices, STRASBOURG, FRANCE, JUN 04-07, 1996. Published in: THIN SOLID FILMS, 294 (1-2). pp. 182-185. ISSN 0040-6090.

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Abstract

The thermal conductivities and the thermoelectric powers of two-dimensional hole gases in fully strained Si/Si0.8Ge0.2 heterostructures have been measured for the first lime in the temperature range 3 K to 25 K, and for carrier sheet densities in the range 0.2 to 1 x 10(12) cm(-2). The thermopower is dominated by the phonon drag contribution and a fit to theory yields a value of 4.5 eV for the acoustic phonon deformation potential, with no other adjustable parameters. (C) 1997 Elsevier Science S.A.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	THIN SOLID FILMS
Publisher:	ELSEVIER SCIENCE SA LAUSANNE
ISSN:	0040-6090
Official Date:	15 February 1997
Dates:	Date Event 15 February 1997 UNSPECIFIED
Volume:	294
Number:	1-2
Number of Pages:	4
Page Range:	pp. 182-185
Publication Status:	Published
Title of Event:	European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices
Location of Event:	STRASBOURG, FRANCE
Date(s) of Event:	JUN 04-07, 1996

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