Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .1. General physical pattern
UNSPECIFIED. (1996) Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .1. General physical pattern. FIZIKA NIZKIKH TEMPERATUR, 22 (10). pp. 1166-1173. ISSN 0132-6414Full text not available from this repository.
The variation of electronic kinetic characteristics (conductivity, magnetoresistance, Hall emf) with temperature has been studied over a temperature range 1.6-300 K in epitaxial Si crystals involving delta(Sb) layer with a different sheet concentration of Sb doping atoms. It has been established for the first time that at the temperatures above 30 K the properties of these samples reflect the behavior of electrons not only ill the very delta-layer but also in the adjacent regions showing the alloyed semiconductor properties with a clearly defined temperature region of exponential variation of resistance with inverse temperature.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||FIZIKA NIZKIKH TEMPERATUR|
|Publisher:||FIZIKA NIZKIKH TEMPERATUR|
|Official Date:||October 1996|
|Number of Pages:||8|
|Page Range:||pp. 1166-1173|
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