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Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .1. General physical pattern
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UNSPECIFIED (1996) Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .1. General physical pattern. FIZIKA NIZKIKH TEMPERATUR, 22 (10). pp. 1166-1173. ISSN 0132-6414
Full text not available from this repository.Abstract
The variation of electronic kinetic characteristics (conductivity, magnetoresistance, Hall emf) with temperature has been studied over a temperature range 1.6-300 K in epitaxial Si crystals involving delta(Sb) layer with a different sheet concentration of Sb doping atoms. It has been established for the first time that at the temperatures above 30 K the properties of these samples reflect the behavior of electrons not only ill the very delta-layer but also in the adjacent regions showing the alloyed semiconductor properties with a clearly defined temperature region of exponential variation of resistance with inverse temperature.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | FIZIKA NIZKIKH TEMPERATUR |
| Publisher: | FIZIKA NIZKIKH TEMPERATUR |
| ISSN: | 0132-6414 |
| Date: | October 1996 |
| Volume: | 22 |
| Number: | 10 |
| Number of Pages: | 8 |
| Page Range: | pp. 1166-1173 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/18023 |
Data sourced from Thomson Reuters' Web of Knowledge
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