Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .2. Effects of weak localization and electron-electron interaction
UNSPECIFIED. (1996) Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .2. Effects of weak localization and electron-electron interaction. FIZIKA NIZKIKH TEMPERATUR, 22 (10). pp. 1174-1185. ISSN 0132-6414Full text not available from this repository.
The temperature (from 1.5 to 2 K) and magnetic field (up to 4.5 T) dependences of conductivity and Hall's emf have been studied in delta[Sb]-layers of Si with a different Hall's concentration of charge carriers. It is shown that these dependences can be described to a high degree of accuracy by the quantum corrections to Conductivity associated with effects of weak localization of electron and electron-electron interaction in a two-dimensional system. The temperature dependence of electron phase relaxation time, the spin-orbit interaction time and the parameter lambda(D) of electron-electron interaction have been determined. It is found that decreasing concentration of electron in a delta-layer involves a decrease in lambda(D) that may be explained by the peculiarities of screening processes in a two-dimensional electronic system.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||FIZIKA NIZKIKH TEMPERATUR|
|Publisher:||FIZIKA NIZKIKH TEMPERATUR|
|Official Date:||October 1996|
|Number of Pages:||12|
|Page Range:||pp. 1174-1185|
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