UNSPECIFIED (1996) Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .2. Effects of weak localization and electron-electron interaction. FIZIKA NIZKIKH TEMPERATUR, 22 (10). pp. 1174-1185. ISSN 0132-6414

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Abstract

The temperature (from 1.5 to 2 K) and magnetic field (up to 4.5 T) dependences of conductivity and Hall's emf have been studied in delta[Sb]-layers of Si with a different Hall's concentration of charge carriers. It is shown that these dependences can be described to a high degree of accuracy by the quantum corrections to Conductivity associated with effects of weak localization of electron and electron-electron interaction in a two-dimensional system. The temperature dependence of electron phase relaxation time, the spin-orbit interaction time and the parameter lambda(D) of electron-electron interaction have been determined. It is found that decreasing concentration of electron in a delta-layer involves a decrease in lambda(D) that may be explained by the peculiarities of screening processes in a two-dimensional electronic system.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	FIZIKA NIZKIKH TEMPERATUR
Publisher:	FIZIKA NIZKIKH TEMPERATUR
ISSN:	0132-6414
Date:	October 1996
Volume:	22
Number:	10
Number of Pages:	12
Page Range:	pp. 1174-1185
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/18024

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