UNSPECIFIED (1997) Fabrication of SiGe quantum devices by electron-beam induced damage. SUPERLATTICES AND MICROSTRUCTURES, 21 (1). pp. 29-36. ISSN 0749-6036

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Abstract

The effects of electron beam irradiation damage has been investigated in Si/SiGe heterostructures. The damage to SiGe two-dimensional hole gases (2DHGs) was measured as a function of accelerating voltage and electron dose. For 40 keV electrons at a dose of 2 C m(-2) (typical PMMA resist values), the material properties were not significantly altered. For 100 keV and higher energy electrons, the irradiated material became more resistive at 300 K as the electron energies were increased. The material became highly resistive at low temperatures and froze out at between 20 and 30 K. The 2DHGs also became more resistive at 300 K when the irradiation dose was increased. A number of narrow channel devices were fabricated on high mobility SiGe two-dimensional electron gases (2DEGs) using the damage technique and gated using Schottky gates. Plateaux were observed in the conductance as a function of gate voltage. Random telegraph signals (RTSs) were observed from a 10 mu m-wide Hall bar irradiated with 300 keV electrons at a dose of 10(5) C m(-2). (C) 1997 Academic Press Limited

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	SUPERLATTICES AND MICROSTRUCTURES
Publisher:	ACADEMIC PRESS LTD
ISSN:	0749-6036
Date:	1997
Volume:	21
Number:	1
Number of Pages:	8
Page Range:	pp. 29-36
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/18035

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