Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A
UNSPECIFIED (1997) Direct evidence for the step density model in the initial stages of the layer-by-layer homoepitaxial growth of GaAs(111)A. Surface Science, 370 (1). L173-L178. ISSN 0039-6028Full text not available from this repository.
Scanning tunnelling microscopy (STM) has been used to investigate the morphological basis of the specular beam intensity oscillations observed in reflection high-energy electron diffraction (RHEED) studies during the initial stages of GaAs(111)A homoepitaxy. Analysis of STM images after the deposition of controlled amounts of GaAs up to a coverage of 2 monolayers show a strong relationship between the step density and the RHEED specular beam intensity. It is shown that the RHEED oscillations observed during the initial stages of growth reflect the temporal variation in surface step density.
|Item Type:||Journal Article|
|Subjects:||Q Science > QD Chemistry
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Date:||1 January 1997|
|Number of Pages:||6|
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