The dependence of the Composite Fermion effective mass on carrier density and Zeeman energy
UNSPECIFIED (1996) The dependence of the Composite Fermion effective mass on carrier density and Zeeman energy. In: 9th International Winterschool on New Developments in Solid State Physics - Nanostructure Physics and Technology, FEB 19-23, 1996, SALZBURG, AUSTRIA.Full text not available from this repository.
Measurements of the temperature-dependent resistivity of high-mobility GaAs/GaAlAs heterojunctions are used to measure the effective mass of Composite Fermions (CF). The CF effective mass is found to increase approximately linearly with the effective field B* up to effective fields of 14 T. Data from all fractions around nu = 1/2 are unified by the single parameter B* for samples studied over a wide range of temperature. The energy gap is found to increase as root B* at high fields. Hydrostatic pressure is used to reduce the value of the electron g-factor, and this is shown to have a large effect on the relative strengths of different fractions. By 13.4 kbar, where the Zeeman energy is only 1/4 of its value at 0 bar, fractions with odd numerators are found to be strongly suppressed, and new features with even numerators appear. The energy gaps measured for 5/3 as a function of carrier density and pressure are consistent with a g-factor equal to the bulk value enhanced by a factor of two due to exchange interactions.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|Publisher:||IOP PUBLISHING LTD|
|Number:||11 Suppl. S|
|Number of Pages:||5|
|Page Range:||pp. 1477-1481|
|Title of Event:||9th International Winterschool on New Developments in Solid State Physics - Nanostructure Physics and Technology|
|Location of Event:||SALZBURG, AUSTRIA|
|Date(s) of Event:||FEB 19-23, 1996|
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