UNSPECIFIED (1996) The dependence of the Composite Fermion effective mass on carrier density and Zeeman energy. In: 9th International Winterschool on New Developments in Solid State Physics - Nanostructure Physics and Technology, FEB 19-23, 1996, SALZBURG, AUSTRIA.

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Abstract

Measurements of the temperature-dependent resistivity of high-mobility GaAs/GaAlAs heterojunctions are used to measure the effective mass of Composite Fermions (CF). The CF effective mass is found to increase approximately linearly with the effective field B* up to effective fields of 14 T. Data from all fractions around nu = 1/2 are unified by the single parameter B* for samples studied over a wide range of temperature. The energy gap is found to increase as root B* at high fields. Hydrostatic pressure is used to reduce the value of the electron g-factor, and this is shown to have a large effect on the relative strengths of different fractions. By 13.4 kbar, where the Zeeman energy is only 1/4 of its value at 0 bar, fractions with odd numerators are found to be strongly suppressed, and new features with even numerators appear. The energy gaps measured for 5/3 as a function of carrier density and pressure are consistent with a g-factor equal to the bulk value enhanced by a factor of two due to exchange interactions.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0268-1242
Date:	November 1996
Volume:	11
Number:	11 Suppl. S
Number of Pages:	5
Page Range:	pp. 1477-1481
Publication Status:	Published
Title of Event:	9th International Winterschool on New Developments in Solid State Physics - Nanostructure Physics and Technology
Location of Event:	SALZBURG, AUSTRIA
Date(s) of Event:	FEB 19-23, 1996
URI:	http://wrap.warwick.ac.uk/id/eprint/18188

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