UNSPECIFIED (1996) Coaxial impact collision ion scattering spectroscopy studies of Sb adsorption on the two-domain (100) surface of silicon. In: 12th International Conference on Ion Beam Analysis (IBA-12), MAY 22-26, 1995, ARIZONA STATE UNIV CAMPUS, TEMPE, AZ.

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Abstract

We present experimental and simulated coaxial impact collision ion scattering spectroscopy (CAICISS) data from the clean Si(100) surface and a Si(100)-(2 X 1)-Sb two-domain surface. The (2 X 1)-Sb surface was formed, following Sb deposition at 300 degrees C and annealing to 540 degrees C, and is shown to comprise of rows of symmetric Sb-dimers with an intra-dimer spacing of 2.7 +/- 0.1 Angstrom and a height above the silicon surface of 1.5 +/- 0.2 Angstrom. There is also evidence, from near critical edge scans, for the existence of dimer vacancies and single defects on this surface which give rise to additional coverage dependent intensity above polar angles > 165 degrees. The coverage dependence of the defect and dimer vacancy concentrations on the surface has been estimated and at Sb coverages > 2.0 monolayers the overlayer appears to be amorphous in nature.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics
Journal or Publication Title:	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0168-583X
Date:	September 1996
Volume:	118
Number:	1-4
Number of Pages:	5
Page Range:	pp. 462-466
Publication Status:	Published
Title of Event:	12th International Conference on Ion Beam Analysis (IBA-12)
Location of Event:	ARIZONA STATE UNIV CAMPUS, TEMPE, AZ
Date(s) of Event:	MAY 22-26, 1995
URI:	http://wrap.warwick.ac.uk/id/eprint/18300

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