Influence of surfactant coverage on epitaxial growth of Ge on Si(001)
UNSPECIFIED. (1996) Influence of surfactant coverage on epitaxial growth of Ge on Si(001). PHYSICAL REVIEW B, 54 (12). pp. 8600-8604. ISSN 0163-1829Full text not available from this repository.
The growth of Ge on Si(001) at elevated temperatures has been monitored in real time using coaxial impact collision ion scattering spectroscopy in the presence of various constant coverages of surfactant, Bi or Sb, with thermal evaporation of the surfactant being compensated automatically. As the coverage of surfactant increases, the intermixing of Ge and Si is suppressed, the crystalline quality of the resulting Ge film is improved, and the nucleation and growth of macroscopic Ge islands is suppressed.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICAL REVIEW B|
|Publisher:||AMERICAN PHYSICAL SOC|
|Date:||15 September 1996|
|Number of Pages:||5|
|Page Range:||pp. 8600-8604|
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