UNSPECIFIED (1996) Low temperature electron transport in Si with an MBE grown delta<Sb>-layer. In: 21st International Conference on Low Temperature Physics (LT 21), PRAGUE, CZECH REPUBLIC, AUG 08-14, 1996. Published in: CZECHOSLOVAK JOURNAL OF PHYSICS, 46 (Suppl. 5). pp. 2479-2480.

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Abstract

The temperature alteration of the kinetic electron characteristics (conductivity, Hall coefficient, magnetic field dependences of resistivity) of Si crystals containing gamma < Sb >-layers with various Sb atom concentrations N-Sb has been studied in the range 1.6-300 K. It was revealed that at low temperatures the properties of such a system are specified by the delta-layer itself. The temperature dependence of the electronic characteristics of low resistance samples (N-Sb = (1 divided by 3). 10(14) cm(-2)) is due to quantum interference effects (effects of electron weak localization (WL) and electron-electron interaction (EEI)) in the two-dimensional system, and those of high resistance (N-Sb = (5 divided by 10). 10(12) cm(-2)) to hopping conductivity mechanisms. In the higher temperature range their behaviour is described by the properties of the doped semiconductor.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics
Journal or Publication Title:	CZECHOSLOVAK JOURNAL OF PHYSICS
Publisher:	CZECHOSLOVAK JNL OF PHYSICS
ISSN:	0011-4626
Date:	1996
Volume:	46
Number:	Suppl. 5
Number of Pages:	2
Page Range:	pp. 2479-2480
Publication Status:	Published
Title of Event:	21st International Conference on Low Temperature Physics (LT 21)
Location of Event:	PRAGUE, CZECH REPUBLIC
Date(s) of Event:	AUG 08-14, 1996
URI:	http://wrap.warwick.ac.uk/id/eprint/18330

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