Low temperature electron transport in Si with an MBE grown delta<Sb>-layer
UNSPECIFIED (1996) Low temperature electron transport in Si with an MBE grown delta<Sb>-layer. In: 21st International Conference on Low Temperature Physics (LT 21), PRAGUE, CZECH REPUBLIC, AUG 08-14, 1996. Published in: CZECHOSLOVAK JOURNAL OF PHYSICS, 46 (Suppl. 5). pp. 2479-2480.Full text not available from this repository.
The temperature alteration of the kinetic electron characteristics (conductivity, Hall coefficient, magnetic field dependences of resistivity) of Si crystals containing gamma < Sb >-layers with various Sb atom concentrations N-Sb has been studied in the range 1.6-300 K. It was revealed that at low temperatures the properties of such a system are specified by the delta-layer itself. The temperature dependence of the electronic characteristics of low resistance samples (N-Sb = (1 divided by 3). 10(14) cm(-2)) is due to quantum interference effects (effects of electron weak localization (WL) and electron-electron interaction (EEI)) in the two-dimensional system, and those of high resistance (N-Sb = (5 divided by 10). 10(12) cm(-2)) to hopping conductivity mechanisms. In the higher temperature range their behaviour is described by the properties of the doped semiconductor.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||CZECHOSLOVAK JOURNAL OF PHYSICS|
|Publisher:||CZECHOSLOVAK JNL OF PHYSICS|
|Number of Pages:||2|
|Page Range:||pp. 2479-2480|
|Title of Event:||21st International Conference on Low Temperature Physics (LT 21)|
|Location of Event:||PRAGUE, CZECH REPUBLIC|
|Date(s) of Event:||AUG 08-14, 1996|
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