Weak localisation and interaction of electrons in MBE delta<Sb>-layers in Si
UNSPECIFIED (1996) Weak localisation and interaction of electrons in MBE delta<Sb>-layers in Si. In: 21st International Conference on Low Temperature Physics (LT 21), AUG 08-14, 1996, PRAGUE, CZECH REPUBLIC.Full text not available from this repository.
Temperature (1.6 - 20 K) and magnetic field (up to 2.5 T) dependences of quantum corrections to the conductivity and Hall coefficient of Si epitaxial films containing a delta < Sb >-layer of different sheet density N-Sb are studied. The quantum corrections are due to the effects of electron weak localization (WL) and electron-electron interaction (EEI). Analysis of the quantum corrections made it possible to determine the temperature dependence of electron phase relaxation time tau(phi), the spin-orbit interaction time tau(so) and the screening factor F. It is found that the dependence tau(phi)(T) is determined by the electron-electron scattering processes, tau(phi) proportional to T--p with p approximate to 1, and an increase in the parameter F with decreasing electron concentration n in the delta-layer is related to the specific features of the screening processes in two-dimensional electron systems.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||CZECHOSLOVAK JOURNAL OF PHYSICS|
|Publisher:||CZECHOSLOVAK JNL OF PHYSICS|
|Number of Pages:||2|
|Page Range:||pp. 2481-2482|
|Title of Event:||21st International Conference on Low Temperature Physics (LT 21)|
|Location of Event:||PRAGUE, CZECH REPUBLIC|
|Date(s) of Event:||AUG 08-14, 1996|
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