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Weak localisation and interaction of electrons in MBE delta<Sb>-layers in Si
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UNSPECIFIED (1996) Weak localisation and interaction of electrons in MBE delta<Sb>-layers in Si. In: 21st International Conference on Low Temperature Physics (LT 21), AUG 08-14, 1996, PRAGUE, CZECH REPUBLIC.
Full text not available from this repository.Abstract
Temperature (1.6 - 20 K) and magnetic field (up to 2.5 T) dependences of quantum corrections to the conductivity and Hall coefficient of Si epitaxial films containing a delta < Sb >-layer of different sheet density N-Sb are studied. The quantum corrections are due to the effects of electron weak localization (WL) and electron-electron interaction (EEI). Analysis of the quantum corrections made it possible to determine the temperature dependence of electron phase relaxation time tau(phi), the spin-orbit interaction time tau(so) and the screening factor F. It is found that the dependence tau(phi)(T) is determined by the electron-electron scattering processes, tau(phi) proportional to T--p with p approximate to 1, and an increase in the parameter F with decreasing electron concentration n in the delta-layer is related to the specific features of the screening processes in two-dimensional electron systems.
| Item Type: | Conference Item (UNSPECIFIED) |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | CZECHOSLOVAK JOURNAL OF PHYSICS |
| Publisher: | CZECHOSLOVAK JNL OF PHYSICS |
| ISSN: | 0011-4626 |
| Date: | 1996 |
| Volume: | 46 |
| Number: | Suppl. 5 |
| Number of Pages: | 2 |
| Page Range: | pp. 2481-2482 |
| Publication Status: | Published |
| Title of Event: | 21st International Conference on Low Temperature Physics (LT 21) |
| Location of Event: | PRAGUE, CZECH REPUBLIC |
| Date(s) of Event: | AUG 08-14, 1996 |
| URI: | http://wrap.warwick.ac.uk/id/eprint/18331 |
Data sourced from Thomson Reuters' Web of Knowledge
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