UNSPECIFIED (1996) p-channel SiGe heterostructures for field effect applications. In: International Symposium on Si Heterostructures - From Physics to Devices, SEP 11-14, 1995, IRAKLION, GREECE.

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Abstract

High speed p MOS devices are now in prospect which take advantage of strain induced modifications of band structure in Si1-xGex layers with 0 less than or equal to x less than or equal to 1. This paper reviews our current knowledge of the electrical properties of the 2D hole gas in SiGe materials which is needed in order to assess device potential. Hall effect, Shubnikov-de Haas and cyclotron resonance data on fully pseudomorphic Si/SiGe/Si structures and on Si1-xGex layers grown on strain tuning Si1-xGey 'virtual substrates' are presented. The roles of alloy disorder, interface charge, interface roughness and phonon scattering are discussed. Finally, we comment on current and possible future device performance in the light of experimental and theoretical results.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	Surface Science
Publisher:	ELSEVIER SCIENCE BV
ISSN:	0169-4332
Date:	August 1996
Volume:	102
Number of Pages:	9
Page Range:	pp. 221-229
Publication Status:	Published
Title of Event:	International Symposium on Si Heterostructures - From Physics to Devices
Location of Event:	IRAKLION, GREECE
Date(s) of Event:	SEP 11-14, 1995
URI:	http://wrap.warwick.ac.uk/id/eprint/18368

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