Chemical nature of the luminescent centre in fresh and aged porous silicon layers
UNSPECIFIED (1996) Chemical nature of the luminescent centre in fresh and aged porous silicon layers. In: International Symposium on Si Heterostructures - From Physics to Devices, IRAKLION, GREECE, SEP 11-14, 1995. Published in: Surface Science, 102 pp. 408-412.Full text not available from this repository.
In this study we have used high resolution parallel electron energy loss spectroscopy (PEELS) and X-ray excited optical luminescence (XEOL) to investigate the chemical nature of the luminescence centre in fresh and aged porous silicon. Wt find that regardless of the non-stoichiometric oxides which were observed by PEELS in our fresh porous silicon layers Si-Si bonded material is involved in the luminescence process. However, in the case of aged porous silicon both Si-Si and Si-O bonded material are involved.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Official Date:||August 1996|
|Number of Pages:||5|
|Page Range:||pp. 408-412|
|Title of Event:||International Symposium on Si Heterostructures - From Physics to Devices|
|Location of Event:||IRAKLION, GREECE|
|Date(s) of Event:||SEP 11-14, 1995|
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