Secondary ion mass spectroscopy resolution with ultra-low beam energies
UNSPECIFIED (1996) Secondary ion mass spectroscopy resolution with ultra-low beam energies. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 14 (4). pp. 2645-2650. ISSN 0734-2101Full text not available from this repository.
The depth resolution attainable in secondary ion mass spectroscopy (SIMS) depth profiling is shown to be greatly enhanced by the use of a floating ion gun, which is capable of delivering high primary ion currents (ca. 100 nA) at impact energies down to 250 eV. With specially grown, genuinely abrupt GaAs (Si,Al) delta layers and Si0.8Ge0.2Si structures we have achieved SIMS profile full width at half maximum data as low as 1.3-2.2 nm (species dependent). Approximating the leading edges by exp(z/lambda(L)), where z is depth, we achieve lambda(L) (growth length) values approximate to 0.2 nm (i.e., 0.5 nm per decade of concentration). The trailing edge data, exp(-z/lambda(T)), exhibit the expected elemental dependence due to differences in preferential sputtering and more complex effects, with lambda(T) (decay length) ranging from 0.6 nm for Si to 1.8 nm for Al. This analytical performance, which can be obtained in combination with at least 1 part per million atomic elemental sensitivity, represents a major improvement in SIMS depth profiling capability. (C) 1996 American Vacuum Society.
|Item Type:||Journal Article|
|Subjects:||T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS|
|Publisher:||AMER INST PHYSICS|
|Number of Pages:||6|
|Page Range:||pp. 2645-2650|
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