Residual strain in Si-Si1-xGex quantum dots
UNSPECIFIED (1996) Residual strain in Si-Si1-xGex quantum dots. In: 7th International Conference on Modulated Semiconductor Structures (MSS-7), JUL 10-14, 1995, MADRID, SPAIN.Full text not available from this repository.
Quantum dots of 50-60 nm diameter fabricated from both Si-Si1-xGex (x = 0.1-0.3) strained layer superlattices and a strain symmetrized Si-9-Ge-6 superlattice were investigated by photoluminescence and Raman scattering. It was found that the residual strain in 50 nm etched quantum dots can be as large as 50% of a corresponding pseudomorphic structure. In addition, both the photoluminescence intensity and quenching temperature of these dots increase as compared to the corresponding as-grown superlattices. These improved optical properties may be due to a combined effect of lateral quantum confinement and a possible indirect-direct bandgap transition in the dots induced by the change of strain field during the nanofabrication process.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||SOLID-STATE ELECTRONICS|
|Publisher:||PERGAMON-ELSEVIER SCIENCE LTD|
|Number:||1-8 Sp. Iss. SI|
|Number of Pages:||4|
|Page Range:||pp. 383-386|
|Title of Event:||7th International Conference on Modulated Semiconductor Structures (MSS-7)|
|Location of Event:||MADRID, SPAIN|
|Date(s) of Event:||JUL 10-14, 1995|
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