UNSPECIFIED (1996) Residual strain in Si-Si1-xGex quantum dots. In: 7th International Conference on Modulated Semiconductor Structures (MSS-7), JUL 10-14, 1995, MADRID, SPAIN.

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Abstract

Quantum dots of 50-60 nm diameter fabricated from both Si-Si1-xGex (x = 0.1-0.3) strained layer superlattices and a strain symmetrized Si-9-Ge-6 superlattice were investigated by photoluminescence and Raman scattering. It was found that the residual strain in 50 nm etched quantum dots can be as large as 50% of a corresponding pseudomorphic structure. In addition, both the photoluminescence intensity and quenching temperature of these dots increase as compared to the corresponding as-grown superlattices. These improved optical properties may be due to a combined effect of lateral quantum confinement and a possible indirect-direct bandgap transition in the dots induced by the change of strain field during the nanofabrication process.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics
Journal or Publication Title:	SOLID-STATE ELECTRONICS
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
ISSN:	0038-1101
Date:	1996
Volume:	40
Number:	1-8 Sp. Iss. SI
Number of Pages:	4
Page Range:	pp. 383-386
Publication Status:	Published
Title of Event:	7th International Conference on Modulated Semiconductor Structures (MSS-7)
Location of Event:	MADRID, SPAIN
Date(s) of Event:	JUL 10-14, 1995
URI:	http://wrap.warwick.ac.uk/id/eprint/18801

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