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Ultrasound generation in single-crystal silicon using a pulsed Nd:YAG laser
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UNSPECIFIED (1996) Ultrasound generation in single-crystal silicon using a pulsed Nd:YAG laser. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 29 (5). pp. 1345-1348. ISSN 0022-3727
Full text not available from this repository.Abstract
The performance of a Q-switched Nd:YAG laser as an ultrasonic source in a single-crystal silicon sample has been studied using a wide-bandwidth modified Michelson interferometer as an absolute displacement sensor. At low power densities the source is an extended buried thermoelastic source; however, the thermal expansion is less than the contraction due to the negative pressure coefficient of the energy gap and the illuminated region contracts rather than expands. Above a certain power density, ablation occurs, giving rise to a localized normal force at the surface of the sample.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | JOURNAL OF PHYSICS D-APPLIED PHYSICS |
| Publisher: | IOP PUBLISHING LTD |
| ISSN: | 0022-3727 |
| Date: | 14 May 1996 |
| Volume: | 29 |
| Number: | 5 |
| Number of Pages: | 4 |
| Page Range: | pp. 1345-1348 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/18809 |
Data sourced from Thomson Reuters' Web of Knowledge
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