Ultrasound generation in single-crystal silicon using a pulsed Nd:YAG laser
UNSPECIFIED (1996) Ultrasound generation in single-crystal silicon using a pulsed Nd:YAG laser. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 29 (5). pp. 1345-1348. ISSN 0022-3727Full text not available from this repository.
The performance of a Q-switched Nd:YAG laser as an ultrasonic source in a single-crystal silicon sample has been studied using a wide-bandwidth modified Michelson interferometer as an absolute displacement sensor. At low power densities the source is an extended buried thermoelastic source; however, the thermal expansion is less than the contraction due to the negative pressure coefficient of the energy gap and the illuminated region contracts rather than expands. Above a certain power density, ablation occurs, giving rise to a localized normal force at the surface of the sample.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF PHYSICS D-APPLIED PHYSICS|
|Publisher:||IOP PUBLISHING LTD|
|Date:||14 May 1996|
|Number of Pages:||4|
|Page Range:||pp. 1345-1348|
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