UNSPECIFIED (1996) Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains. ELECTRONICS LETTERS, 32 (3). pp. 269-270. ISSN 0013-5194

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Abstract

Silicon CMOS devices are subject to some limitations as the dimensions are scaled down for VLSI applications. The incorporation of SiGe into the p-channel device can reduce parasitic bipolar action and punchthrough susceptibility. The authors compare the properties of elevated source and drain devices with and without Si1-xGex in the source and drain regions. We show that the parasitic bipolar gain is reduced by a factor of 18 and that the punchthrough effects seen in silicon devices are absent in the Si0.8Ge0.2 devices.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Journal or Publication Title:	ELECTRONICS LETTERS
Publisher:	IEE-INST ELEC ENG
ISSN:	0013-5194
Date:	1 February 1996
Volume:	32
Number:	3
Number of Pages:	2
Page Range:	pp. 269-270
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/18821

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