Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains
UNSPECIFIED (1996) Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains. ELECTRONICS LETTERS, 32 (3). pp. 269-270. ISSN 0013-5194Full text not available from this repository.
Silicon CMOS devices are subject to some limitations as the dimensions are scaled down for VLSI applications. The incorporation of SiGe into the p-channel device can reduce parasitic bipolar action and punchthrough susceptibility. The authors compare the properties of elevated source and drain devices with and without Si1-xGex in the source and drain regions. We show that the parasitic bipolar gain is reduced by a factor of 18 and that the punchthrough effects seen in silicon devices are absent in the Si0.8Ge0.2 devices.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Journal or Publication Title:||ELECTRONICS LETTERS|
|Publisher:||IEE-INST ELEC ENG|
|Date:||1 February 1996|
|Number of Pages:||2|
|Page Range:||pp. 269-270|
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