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Focused ion beam preparation of inclined planes in semiconductor materials
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UNSPECIFIED (1996) Focused ion beam preparation of inclined planes in semiconductor materials. VACUUM, 47 (5). pp. 451-454. ISSN 0042-207X
Full text not available from this repository.Abstract
Focused ion beam (FIB) micromachining has been used to produce inclined planes on semiconductor surfaces. A 10 keV FIB system, utilising a Ga+ liquid metal ion source (LMIS), was employed. The ramped surfaces were prepared by digitally deflecting the ion beam in a serpentine fashion over a rectangular area and incrementing the time the beam spends at a pixel, dwell time, line by line. For the conditions used, control in micromachining the inclination of the ramps to the starting horizontal surface is of the order of 1 are s per scan of the FIB over the area of interest. The possibility of using such surfaces prepared by FIB, along with vacuum growth techniques such as molecular beam epitaxy (MBE), for application to strain relief structures and lateral device production is discussed.
| Item Type: | Journal Article |
|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Journal or Publication Title: | VACUUM |
| Publisher: | PERGAMON-ELSEVIER SCIENCE LTD |
| ISSN: | 0042-207X |
| Date: | May 1996 |
| Volume: | 47 |
| Number: | 5 |
| Number of Pages: | 4 |
| Page Range: | pp. 451-454 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/18849 |
Data sourced from Thomson Reuters' Web of Knowledge
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