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Dopant diffusion in strained and relaxed Si1-xGex
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UNSPECIFIED (1995) Dopant diffusion in strained and relaxed Si1-xGex. In: 18th International Conference on Defects in Semiconductors (ICDS-18), SENDAI, JAPAN, JUL 23-28, 1995. Published in: ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 196- pp. 345-348. ISBN 0-87849-716-1. ISSN 0255-5476.
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Abstract
Preliminary studies were conducted on the effect of germanium content on antimony diffusion in silicon rich Si1-xCex strained layer heterostructures. The diffusion of Sb is characterised by a higher diffusivity in the alloy than in silicon from which we infer a higher vacancy mobility and/or vacancy concentration in Si1-xGex than in Si. We confirm that boron diffusion is dominated by an interstitial based mechanism in this composition range, and propose that Sb can be used as a monitor for vacancy diffusion in the alloy.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) | ||||
Series Name: | MATERIALS SCIENCE FORUM | ||||
Journal or Publication Title: | ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | ||||
Publisher: | TRANSTEC PUBLICATIONS LTD | ||||
ISBN: | 0-87849-716-1 | ||||
ISSN: | 0255-5476 | ||||
Editor: | Suezawa, M and KatayamaYoshida, H | ||||
Official Date: | 1995 | ||||
Dates: |
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Volume: | 196- | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 345-348 | ||||
Publication Status: | Published | ||||
Title of Event: | 18th International Conference on Defects in Semiconductors (ICDS-18) | ||||
Location of Event: | SENDAI, JAPAN | ||||
Date(s) of Event: | JUL 23-28, 1995 |
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