Experimental investigation of the increase in depth resolution obtained through the use of maximum entropy deconvolution of secondary ion mass spectrometry depth profiles
UNSPECIFIED (1996) Experimental investigation of the increase in depth resolution obtained through the use of maximum entropy deconvolution of secondary ion mass spectrometry depth profiles. In: 3rd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, MCNC, CTR MICROELECTR, RES TRIANGLE PK, NC, MAR 20-22, 1995. Published in: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 14 (1). pp. 283-286.Full text not available from this repository.
Depth profiling using secondary ion mass spectrometry (SIMS) provides profiles of high sensitivity and depth resolution. To obtain the greatest depth resolution, low energy probes must be employed to minimize the redistribution of the sample. However, there is a lower limit beyond which further reduction in energy causes a decrease in ion and sputter yields to a point where sensitive SIMS is no longer possible. Also, with most ion guns, a reduction in energy brings a dramatic loss of current leading to unrealistically long analysis times. To overcome these problems a deconvolution method may be employed to extract the maximum amount of information from data acquired at a higher energy. In this article we experimentally investigate the extent to which the maximum entropy deconvolution method may enhance the depth resolution, by studying its effect on a sample containing closely spaced delta layers near the conventional SIMS depth resolution limit. (C) 1996 American Vacuum Society.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Journal or Publication Title:||JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B|
|Publisher:||AMER INST PHYSICS|
|Official Date:||January 1996|
|Number of Pages:||4|
|Page Range:||pp. 283-286|
|Title of Event:||3rd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors|
|Location of Event:||MCNC, CTR MICROELECTR, RES TRIANGLE PK, NC|
|Date(s) of Event:||MAR 20-22, 1995|
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