UNSPECIFIED (1996) Two-dimensional profiling of large tilt angle, low energy boron implanted structure using secondary-ion mass spectrometry. In: 3rd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, MAR 20-22, 1995, MCNC, CTR MICROELECTR, RES TRIANGLE PK, NC.

Full text not available from this repository.

Abstract

Experimentally determined two-dimensional dopant maps of implants into semiconductors required for the calibration and verification of process simulation tools used in very large scale integrated (VLSI) circuit design. Direct measurement with currently available techniques is not possible owing to the physical size of the areas in question. Using a specially fabricated structure and a modified secondary-ion mass spectroscopy instrument, it has been possible to measure profiles with high spatial resolution and sensitivity. In this article we present the results of an investigation of a complex boron implant into silicon, as used in advanced VLSI P-type metal-oxide-semiconductor source-drain regions, and compare it with results from process simulators. (C) 1996 American Vacuum Society.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Publisher:	AMER INST PHYSICS
ISSN:	1071-1023
Date:	January 1996
Volume:	14
Number:	1
Number of Pages:	5
Page Range:	pp. 348-352
Publication Status:	Published
Title of Event:	3rd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors
Location of Event:	MCNC, CTR MICROELECTR, RES TRIANGLE PK, NC
Date(s) of Event:	MAR 20-22, 1995
URI:	http://wrap.warwick.ac.uk/id/eprint/19047

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item