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Two-dimensional profiling of large tilt angle, low energy boron implanted structure using secondary-ion mass spectrometry

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UNSPECIFIED (1996) Two-dimensional profiling of large tilt angle, low energy boron implanted structure using secondary-ion mass spectrometry. In: 3rd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, MCNC, CTR MICROELECTR, RES TRIANGLE PK, NC, MAR 20-22, 1995. Published in: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 14 (1). pp. 348-352. ISSN 1071-1023.

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Abstract

Experimentally determined two-dimensional dopant maps of implants into semiconductors required for the calibration and verification of process simulation tools used in very large scale integrated (VLSI) circuit design. Direct measurement with currently available techniques is not possible owing to the physical size of the areas in question. Using a specially fabricated structure and a modified secondary-ion mass spectroscopy instrument, it has been possible to measure profiles with high spatial resolution and sensitivity. In this article we present the results of an investigation of a complex boron implant into silicon, as used in advanced VLSI P-type metal-oxide-semiconductor source-drain regions, and compare it with results from process simulators. (C) 1996 American Vacuum Society.

Item Type: Conference Item (UNSPECIFIED)
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology
Q Science > QC Physics
Journal or Publication Title: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Publisher: AMER INST PHYSICS
ISSN: 1071-1023
Official Date: January 1996
Dates:
DateEvent
January 1996UNSPECIFIED
Volume: 14
Number: 1
Number of Pages: 5
Page Range: pp. 348-352
Publication Status: Published
Title of Event: 3rd International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors
Location of Event: MCNC, CTR MICROELECTR, RES TRIANGLE PK, NC
Date(s) of Event: MAR 20-22, 1995

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