Elastic strain and enhanced light emission in dry etched Si/Si1-xGex quantum dots
UNSPECIFIED (1996) Elastic strain and enhanced light emission in dry etched Si/Si1-xGex quantum dots. JOURNAL OF ELECTRONIC MATERIALS, 25 (2). pp. 287-291. ISSN 0361-5235Full text not available from this repository.
Quantum dots of 50 similar to 60 nm diameter fabricated from both Si/Si1-xGex (x = 0.1 similar to 0.3) strained layer superlattices and a strain symmetried Si-9/Ge-6 superlattice were investigated by a combination of Raman scattering, photoluminescence, and electroluminescence spectroscopy. It was found that, in addition to an enhanced luminescence intensity of the dots by over two orders of magnitude and improved luminescence quenching temperature, all of the nanostructure dots have residual built-in elastic strains, which are of the order of similar to 50% of the values in corresponding pseudomorphic heterostructures. This result suggests a possible mechanism for explaining the huge enhancement of the optical efficiency in our luminescence measurements.
|Item Type:||Journal Article|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||JOURNAL OF ELECTRONIC MATERIALS|
|Publisher:||MINERALS METALS MATERIALS SOC|
|Number of Pages:||5|
|Page Range:||pp. 287-291|
Actions (login required)