An x-ray standing-wave study of H2S adsorption on InP(110)
UNSPECIFIED. (1996) An x-ray standing-wave study of H2S adsorption on InP(110). JOURNAL OF PHYSICS-CONDENSED MATTER, 8 (1). pp. 15-24. ISSN 0953-8984Full text not available from this repository.
The sulphur adsorption site for H2S-dosed InP(110) has been determined using normal-incidence x-ray standing waves (NIXSW) using the (220), (022) and (113) Bragg planes for triangulation. Photoabsorption was monitored by photoelectron emission from the S 1s, P 1s and In 3d(5/2) core levels. The sulphur was found to be located in the phosphorus sites of the continued-layer structure, bonding to the surface indium. Using Auger electron emission for surface-sensitive NIXSW, it was found that H2S adsorption lifts the relaxation of the clean surface.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF PHYSICS-CONDENSED MATTER|
|Publisher:||IOP PUBLISHING LTD|
|Official Date:||1 January 1996|
|Number of Pages:||10|
|Page Range:||pp. 15-24|
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