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Photoluminescence and Raman spectroscopy of Si/Si1-xGex quantum dots
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UNSPECIFIED (1995) Photoluminescence and Raman spectroscopy of Si/Si1-xGex quantum dots. In: 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference, STRASBOURG, FRANCE, MAY 22-26, 1995. Published in: JOURNAL OF CRYSTAL GROWTH, 157 (1-4). pp. 280-284. ISSN 0022-0248.
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Abstract
Quantum dots of 50 nm diameter fabricated from strained layer Si/Si1-xGex (x = 0.1-0.3) superlattices were studied by Raman and photoluminescence spectroscopy. It was found that an elastic residual strain of the order of about 50% of the strength of the corresponding pseudomorphic strain exists in the dry etched quantum dots which show an improved optical efficiency of over two orders of magnitude over the as-grown superlattices. This enhanced light emission may be due to a combined effect of lateral quantum confinement and a possible indirect-direct bandgap transition caused by lattice distortion due to process-induced change of strain field in the dots.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Journal or Publication Title: | JOURNAL OF CRYSTAL GROWTH | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0022-0248 | ||||
Official Date: | December 1995 | ||||
Dates: |
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Volume: | 157 | ||||
Number: | 1-4 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 280-284 | ||||
Publication Status: | Published | ||||
Title of Event: | 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference | ||||
Location of Event: | STRASBOURG, FRANCE | ||||
Date(s) of Event: | MAY 22-26, 1995 |
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