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Observation of piezoelectric-like behaviour in coherently strained B-doped(100)SiGe/Si heterostructures
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UNSPECIFIED (1995) Observation of piezoelectric-like behaviour in coherently strained B-doped(100)SiGe/Si heterostructures. In: 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference, STRASBOURG, FRANCE, MAY 22-26, 1995. Published in: JOURNAL OF CRYSTAL GROWTH, 157 (1-4). pp. 382-385. ISSN 0022-0248.
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Abstract
In the present work the hybrid acoustic spectroscopy technique has been used to demonstrate the conversion of a high frequency (HF) electric field into acoustic waves and to provide the first direct observation of the piezoelectric effect in the SiGe/Si strained layer system. The sample was a p-type modulation doped Si0.88Ge0.12/Si heterostructure containing a two-dimensional hole gas with carrier sheet density 2 x 10(11) cm(-2) and a 4.2 K mobility of 10 500 cm(2) V-1 s(-1). It was excited with a 225.7 MHz high frequency pulse of 1 mu s duration and 0.5 W peak power. The amplitude of the output acoustic signal was about 110 dB below the electromagnetic input signal at 77 K. We believe that the observed electric field-acoustic conversion is associated with the non-centrosymmetric structure of the ordered unit cell of the strained SiGe alloy. Additionally we report on phonon Raman scattering at T = 300 K and hot hole Shubnikov-de Haas and zero magnetic field resistivity behaviour in the same heterostructures in the temperature range of 0.35 to 1.4 K. A broad band near 255 cm(-1) and a peak near 435 cm(-1) have been attributed to a particular Si-Ge ordering within the alloy layer. The energy relaxation of the carriers has been measured and is found to be dominated by a weakly screened piezoelectric coupled acoustic-phonon mechanism, thereby providing further evidence of ordering in the SiGe alloy.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Journal or Publication Title: | JOURNAL OF CRYSTAL GROWTH | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0022-0248 | ||||
Official Date: | December 1995 | ||||
Dates: |
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Volume: | 157 | ||||
Number: | 1-4 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 382-385 | ||||
Publication Status: | Published | ||||
Title of Event: | 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference | ||||
Location of Event: | STRASBOURG, FRANCE | ||||
Date(s) of Event: | MAY 22-26, 1995 |
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