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PIEZOELECTRIC EFFECT IN COHERENTLY STRAINED B-DOPED (001)SIGE/SI HETEROSTRUCTURES
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UNSPECIFIED (1995) PIEZOELECTRIC EFFECT IN COHERENTLY STRAINED B-DOPED (001)SIGE/SI HETEROSTRUCTURES. In: XXIV International School on Physics of Semiconducting Compounds, JASZOWIEC, POLAND, MAY 27-JUN 02, 1995. Published in: ACTA PHYSICA POLONICA A, 88 (4). pp. 779-782. ISSN 0587-4246.
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Abstract
We report on two methods which illustrate piezoelectric effects in the strained Si (100)Si-1-x/Ge-x system. The non-contact sound excitation technique has been used to reveal the conversion of a high-frequency electric field E into acoustic waves at 77 K which can also be modulated by a de applied bias voltage (+/-30 V). The sample was an MBE grown modulation doped Si0.88Ge0.12/(001)Si structure with a carrier sheet density 2.0 x 10(11) cm(-2) and a 4.2 K mobility 10500 cm(2)V(-1)s(-1). We deduce that the observed high-frequency electric field acoustic wave conversion is associated with a piezoelectric-like effect possibly due to ordering in the strained SiGe alloy or symmetry breaking effect near Si/SiGe interface. Further evidence is provided by the existence of a piezoelectric phonon interaction in the hot hole energy relaxation mechanism determined from high electric field Shubnikov de Haas He-3 low temperature measurements.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | ACTA PHYSICA POLONICA A | ||||
Publisher: | POLISH ACAD SCIENCES INST PHYSICS | ||||
ISSN: | 0587-4246 | ||||
Official Date: | October 1995 | ||||
Dates: |
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Volume: | 88 | ||||
Number: | 4 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 779-782 | ||||
Publication Status: | Published | ||||
Title of Event: | XXIV International School on Physics of Semiconducting Compounds | ||||
Location of Event: | JASZOWIEC, POLAND | ||||
Date(s) of Event: | MAY 27-JUN 02, 1995 |
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