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THERMODYNAMIC BEHAVIOR OF GEO2 FORMED BY OXYGEN IMPLANTATION INTO RELAXED SI0.5GE0.5 ALLOY
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UNSPECIFIED (1995) THERMODYNAMIC BEHAVIOR OF GEO2 FORMED BY OXYGEN IMPLANTATION INTO RELAXED SI0.5GE0.5 ALLOY. In: 10th International Conference on Ion Implantation Technology, CATANIA, ITALY, JUN 13-17, 1994. Published in: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 96 (1-2). pp. 281-285. ISSN 0168-583X.
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Abstract
The thermal stability of GeO2 formed by oxygen implantation into Si0.5Ge0.5 alloy has been investigated and quantified. The sample used in this experiment consisted of a 900 nm relaxed layer of Si0.5Ge0.5 alloy capped with 78 nm of silicon which was grown on a (100) Si n-type wafer. This was then implanted with a dose of 1.8 X 10(18) O+/cm(2) at 200 keV and specimens from the implanted region were annealed for 1 h at various temperatures. The composition and thickness of the oxide layer, which consisted of SiO2+ GeO2 and redistribution of elemental silicon, germanium and oxygen were determined by Rutherford backscattering spectroscopy. The chemical bonding of silicon and germanium to oxygen was determined using X-ray photoelectron spectroscopy. It is found that the germanium was rejected from the oxide layer and segregated at the interface between SiGe/oxide and oxide/SiGe. The driving force for the mass transport can be attributed to the higher chemical potential of germanium in the oxide layer, which is a consequence of the difference in the free energies of formation of SiO2 and GeO2.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0168-583X | ||||
Official Date: | March 1995 | ||||
Dates: |
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Volume: | 96 | ||||
Number: | 1-2 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 281-285 | ||||
Publication Status: | Published | ||||
Title of Event: | 10th International Conference on Ion Implantation Technology | ||||
Location of Event: | CATANIA, ITALY | ||||
Date(s) of Event: | JUN 13-17, 1994 |
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