LAYER CONTROLLED GROWTH OF OXIDE SUPERCONDUCTORS
UNSPECIFIED (1994) LAYER CONTROLLED GROWTH OF OXIDE SUPERCONDUCTORS. In: 3rd International Symposium on Atomic Layer Epitaxy and Related Surface Processes (ALE-3), SENDAI, JAPAN, MAY 25-27, 1994. Published in: Surface Science, 82-3 pp. 487-493.Full text not available from this repository.
Atomic layer growth control of SrCuO2-based artificial lattices is demonstrated on a SrTiO3(001) surface. Precise control of atomic layer growth has been successfully carried out by in situ monitoring of the RHEED intensities. It was found that the interface layer between the substrate surface and the material to be grown must be carefully constructed and that the introduction of two layers of Sr-O was necessary for the epitaxial growth of tetragonal SrCuO2.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||Q Science > QD Chemistry
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
|Journal or Publication Title:||Surface Science|
|Publisher:||ELSEVIER SCIENCE BV|
|Number of Pages:||7|
|Page Range:||pp. 487-493|
|Title of Event:||3rd International Symposium on Atomic Layer Epitaxy and Related Surface Processes (ALE-3)|
|Location of Event:||SENDAI, JAPAN|
|Date(s) of Event:||MAY 25-27, 1994|
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