UNSPECIFIED (1994) MICROMACHINING OF SEMICONDUCTOR-MATERIALS BY FOCUSED ION-BEAMS. VACUUM, 45 (12). pp. 1169-1173. ISSN 0042-207X

Full text not available from this repository.

Abstract

A Ga+ focused ion beam (FIB) has been used to micromachine semiconductor materials, including III-V compounds. The FIB was operated at 10 keV; (100) substrates of InP, GaAs and Si and epilayers of Ga0.46In0.54As and Ga0.2In0.8As0.4P0.6 grown by metal organic chemical vapour deposition (MOCVD) on (100) InP substrates were used for the micromachining experiments. Large area, rectangular wells with different depths were micromachined in the above, from which material removal rates have been derived using Talysurf profiling and SEM examination, and sputter yields deduced. The uniformity in removal rates with respect to depth has also been examined. In addition, results for clear end-point signals, using sample absorbed current have been established for Ga0.46In0.54As-InP and Ga0.2In0.8As0.4P0.6-InP interfaces.

Item Type:	Journal Article
Subjects:	T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	VACUUM
Publisher:	PERGAMON-ELSEVIER SCIENCE LTD
ISSN:	0042-207X
Date:	December 1994
Volume:	45
Number:	12
Number of Pages:	5
Page Range:	pp. 1169-1173
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/20158

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item