The Library
CHARACTERIZATION OF SHARP INTERFACES AND DELTA-DOPED LAYERS IN SEMICONDUCTORS USING SECONDARY-ION MASS-SPECTROMETRY
Tools
Tools
Tools
UNSPECIFIED (1994) CHARACTERIZATION OF SHARP INTERFACES AND DELTA-DOPED LAYERS IN SEMICONDUCTORS USING SECONDARY-ION MASS-SPECTROMETRY. ANALYTICA CHIMICA ACTA, 297 (1-2). pp. 253-275.
Research output not available from this repository, contact author.Abstract
Methods for the quantitative analysis of very thin (delta) layers and sharp interfaces in semiconductors, differentiating between features close to or consisting of changes in matrix composition, and dilute features are reviewed. Although it is shown that no method currently exists for accurate quantification in the former case, a number of experimental techniques for obtaining the best estimate of the true concentration profile are described, in particular the use of XCs(+) secondary ions. For dilute features, it is shown that deconvolution of the chemical profile using a correctly defined response function gives complete quantification, and the formal framework of the method is given. Depth resolution, and the difficulties inherent in defining and measuring consistent parameters, related to particular mechanisms are discussed within this context.
| Item Type: | Journal Item | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QD Chemistry | ||||
| Journal or Publication Title: | ANALYTICA CHIMICA ACTA | ||||
| Publisher: | ELSEVIER SCIENCE BV | ||||
| ISSN: | 0003-2670 | ||||
| Official Date: | 31 October 1994 | ||||
| Dates: |
|
||||
| Volume: | 297 | ||||
| Number: | 1-2 | ||||
| Number of Pages: | 23 | ||||
| Page Range: | pp. 253-275 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
