UNSPECIFIED. (1994) CHARACTERIZATION OF SI/SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY. JOURNAL OF APPLIED PHYSICS, 76 (7). pp. 4237-4243. ISSN 0021-8979

Abstract

Deep level distributions have been investigated in B-doped Si/Si1-xGex/Si layers grown by molecular beam epitaxy using deep level transient spectroscopy. Broadening in the deep level spectra is discussed in terms of carrier emission over a band of deep level energies as has been considered for both alloy disorder and dislocations. The distortion observed in the deep level spectra in the vicinity of the upper Si/Si1-xGex heterojunction is suggested to be a consequence of the significant band bending that occurs in this region; the possible causes for this distortion are discussed. The deep states exhibit donor-like behavior and the origin of the electrical activity is considered to lie with metal point-defect/dislocation interactions.

Data sourced from Thomson Reuters' Web of Knowledge

Request changes to a record

Actions (login required)

View Item