UNSPECIFIED (1994) CHARACTERIZATION OF SI/SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY. JOURNAL OF APPLIED PHYSICS, 76 (7). pp. 4237-4243. ISSN 0021-8979

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Abstract

Deep level distributions have been investigated in B-doped Si/Si1-xGex/Si layers grown by molecular beam epitaxy using deep level transient spectroscopy. Broadening in the deep level spectra is discussed in terms of carrier emission over a band of deep level energies as has been considered for both alloy disorder and dislocations. The distortion observed in the deep level spectra in the vicinity of the upper Si/Si1-xGex heterojunction is suggested to be a consequence of the significant band bending that occurs in this region; the possible causes for this distortion are discussed. The deep states exhibit donor-like behavior and the origin of the electrical activity is considered to lie with metal point-defect/dislocation interactions.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
ISSN:	0021-8979
Date:	1 October 1994
Volume:	76
Number:	7
Number of Pages:	7
Page Range:	pp. 4237-4243
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/20268

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