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CHARACTERIZATION OF SI/SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY
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UNSPECIFIED (1994) CHARACTERIZATION OF SI/SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY. JOURNAL OF APPLIED PHYSICS, 76 (7). pp. 4237-4243.
Full text not available from this repository, contact author.Abstract
Deep level distributions have been investigated in B-doped Si/Si1-xGex/Si layers grown by molecular beam epitaxy using deep level transient spectroscopy. Broadening in the deep level spectra is discussed in terms of carrier emission over a band of deep level energies as has been considered for both alloy disorder and dislocations. The distortion observed in the deep level spectra in the vicinity of the upper Si/Si1-xGex heterojunction is suggested to be a consequence of the significant band bending that occurs in this region; the possible causes for this distortion are discussed. The deep states exhibit donor-like behavior and the origin of the electrical activity is considered to lie with metal point-defect/dislocation interactions.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Journal or Publication Title: | JOURNAL OF APPLIED PHYSICS | ||||
| Publisher: | AMER INST PHYSICS | ||||
| ISSN: | 0021-8979 | ||||
| Official Date: | 1 October 1994 | ||||
| Dates: |
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| Volume: | 76 | ||||
| Number: | 7 | ||||
| Number of Pages: | 7 | ||||
| Page Range: | pp. 4237-4243 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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