CHARACTERIZATION OF SI/SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY
UNSPECIFIED (1994) CHARACTERIZATION OF SI/SI1-XGEX/SI HETEROSTRUCTURES BY CAPACITANCE-TRANSIENT SPECTROSCOPY. JOURNAL OF APPLIED PHYSICS, 76 (7). pp. 4237-4243. ISSN 0021-8979Full text not available from this repository.
Deep level distributions have been investigated in B-doped Si/Si1-xGex/Si layers grown by molecular beam epitaxy using deep level transient spectroscopy. Broadening in the deep level spectra is discussed in terms of carrier emission over a band of deep level energies as has been considered for both alloy disorder and dislocations. The distortion observed in the deep level spectra in the vicinity of the upper Si/Si1-xGex heterojunction is suggested to be a consequence of the significant band bending that occurs in this region; the possible causes for this distortion are discussed. The deep states exhibit donor-like behavior and the origin of the electrical activity is considered to lie with metal point-defect/dislocation interactions.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF APPLIED PHYSICS|
|Publisher:||AMER INST PHYSICS|
|Date:||1 October 1994|
|Number of Pages:||7|
|Page Range:||pp. 4237-4243|
Actions (login required)