ELECTRONIC-PROPERTIES OF METAL POLY(PYRROLE) JUNCTIONS
UNSPECIFIED (1994) ELECTRONIC-PROPERTIES OF METAL POLY(PYRROLE) JUNCTIONS. In: 4th International Workshop on the Electronic Properties of Metal/Non-Metal Microsystems, AUG 31-SEP 03, 1993, SHEFFIELD HALLAM UNIV, SHEFFIELD, ENGLAND.Full text not available from this repository.
In recent years there has been a growing interest in the use of molecular organic materials in microelectronic devices, such as polymer diodes, transistors and gas sensors. Conducting polymers form an important class of organic materials that are being investigated as a substitute for conventional inorganic semiconductor materials. Electrodeposited conducting polymers, such as the pyrrole-based family, have some distinct advantages in their ease of microdeposition and in situ doping, 'tunable' band-gap and high electronic mobility. In this paper we report on the fabrication and properties of novel poly(pyrrole)-tosylate/metal PPy(pTSA)/metal junctions. Thin (approximately 0.5 mum) PPy(pTSA) films were electrochemically deposited onto small gold electrodes on silicon microelectronic substrates. The PPy(pTSA)/Au junction always forms an ohmic junction. Low work function metal contacts (e.g. Cu and Ag) were either physically evaporated onto the poly(pyrrole) or electrochemically deposited to form the junction. Poor reproducibility was observed in both types of junction with about half the devices exhibiting weakly rectifying junctions (ideality factor of about eight). There was no discernible difference in the characteristics of the evaporated and electrodeposited junctions. The electronic characteristics of the junctions were not consistent with conventional Schottky theory; for example, PPy(pTSA)/Ag always showed an ohmic contact. Instead, the poor stability and general behaviour seems consistent with the formation of an MOS junction following reaction at the interface. Our observations suggest that the development of electrodeposited pyrrole-based microelectronic devices is inherently difficult.
|Item Type:||Conference Item (UNSPECIFIED)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Journal or Publication Title:||INTERNATIONAL JOURNAL OF ELECTRONICS|
|Publisher:||TAYLOR & FRANCIS LTD|
|Number of Pages:||12|
|Page Range:||pp. 173-184|
|Title of Event:||4th International Workshop on the Electronic Properties of Metal/Non-Metal Microsystems|
|Location of Event:||SHEFFIELD HALLAM UNIV, SHEFFIELD, ENGLAND|
|Date(s) of Event:||AUG 31-SEP 03, 1993|
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