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THE EFFECT OF INTERFACE ROUGHNESS ON THE TRANSPORT-PROPERTIES OF A 2-DIMENSIONAL ELECTRON-GAS IN A SI-MOSFET

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UNSPECIFIED (1994) THE EFFECT OF INTERFACE ROUGHNESS ON THE TRANSPORT-PROPERTIES OF A 2-DIMENSIONAL ELECTRON-GAS IN A SI-MOSFET. JOURNAL OF PHYSICS-CONDENSED MATTER, 6 (14). pp. 2713-2726.

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Abstract

The mobility and thermopower of a 2DEG are calculated in order to explain measurements in two Si-MOSFETs. In one of the samples at T < 2 K and for electron densities N(s) > 10(16) m-2, positive thermopowers have been measured. The change of sip in the thermopower is attributed to the dominance of interface roughness scattering. Simultaneous consideration of two transport properties indicates the inadequacy of the current theory of interface roughness to explain electron scattering by interface irregularities in one of the samples. At T > 2 K, thermopower is explained by phonon drag and good agreement is found between theory and experiment.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: JOURNAL OF PHYSICS-CONDENSED MATTER
Publisher: IOP PUBLISHING LTD
ISSN: 0953-8984
Official Date: 4 April 1994
Dates:
DateEvent
4 April 1994UNSPECIFIED
Volume: 6
Number: 14
Number of Pages: 14
Page Range: pp. 2713-2726
Publication Status: Published

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