THE EFFECT OF INTERFACE ROUGHNESS ON THE TRANSPORT-PROPERTIES OF A 2-DIMENSIONAL ELECTRON-GAS IN A SI-MOSFET
UNSPECIFIED (1994) THE EFFECT OF INTERFACE ROUGHNESS ON THE TRANSPORT-PROPERTIES OF A 2-DIMENSIONAL ELECTRON-GAS IN A SI-MOSFET. JOURNAL OF PHYSICS-CONDENSED MATTER, 6 (14). pp. 2713-2726. ISSN 0953-8984Full text not available from this repository.
The mobility and thermopower of a 2DEG are calculated in order to explain measurements in two Si-MOSFETs. In one of the samples at T < 2 K and for electron densities N(s) > 10(16) m-2, positive thermopowers have been measured. The change of sip in the thermopower is attributed to the dominance of interface roughness scattering. Simultaneous consideration of two transport properties indicates the inadequacy of the current theory of interface roughness to explain electron scattering by interface irregularities in one of the samples. At T > 2 K, thermopower is explained by phonon drag and good agreement is found between theory and experiment.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF PHYSICS-CONDENSED MATTER|
|Publisher:||IOP PUBLISHING LTD|
|Date:||4 April 1994|
|Number of Pages:||14|
|Page Range:||pp. 2713-2726|
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