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COTUNNELING OF HOLES IN SILICON-BASED STRUCTURES
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UNSPECIFIED (1994) COTUNNELING OF HOLES IN SILICON-BASED STRUCTURES. PHYSICAL REVIEW B, 49 (23). pp. 16514-16517.
Full text not available from this repository, contact author.Abstract
Inelastic cotunneling of holes through double-tunnel-junction systems fabricated in delta-doped silicon-germanium layers was studied for bias voltages below the Coulomb blockade threshold. The inelastic, linear, finite-temperature cotunneling term dominates for lower voltages while the zero-temperature, cubic cotunneling term dominates for higher voltages below the Coulomb blockade threshold for temperatures above 4.2 K.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | Q Science > QC Physics | ||||
| Journal or Publication Title: | PHYSICAL REVIEW B | ||||
| Publisher: | AMERICAN PHYSICAL SOC | ||||
| ISSN: | 0163-1829 | ||||
| Official Date: | 15 June 1994 | ||||
| Dates: |
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| Volume: | 49 | ||||
| Number: | 23 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 16514-16517 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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