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COTUNNELING OF HOLES IN SILICON-BASED STRUCTURES
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UNSPECIFIED (1994) COTUNNELING OF HOLES IN SILICON-BASED STRUCTURES. PHYSICAL REVIEW B, 49 (23). pp. 16514-16517. ISSN 0163-1829
Full text not available from this repository.Abstract
Inelastic cotunneling of holes through double-tunnel-junction systems fabricated in delta-doped silicon-germanium layers was studied for bias voltages below the Coulomb blockade threshold. The inelastic, linear, finite-temperature cotunneling term dominates for lower voltages while the zero-temperature, cubic cotunneling term dominates for higher voltages below the Coulomb blockade threshold for temperatures above 4.2 K.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | PHYSICAL REVIEW B |
| Publisher: | AMERICAN PHYSICAL SOC |
| ISSN: | 0163-1829 |
| Date: | 15 June 1994 |
| Volume: | 49 |
| Number: | 23 |
| Number of Pages: | 4 |
| Page Range: | pp. 16514-16517 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/20582 |
Data sourced from Thomson Reuters' Web of Knowledge
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