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VERY HIGH 2-DIMENSIONAL HOLE GAS MOBILITIES IN STRAINED SILICON-GERMANIUM
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UNSPECIFIED (1994) VERY HIGH 2-DIMENSIONAL HOLE GAS MOBILITIES IN STRAINED SILICON-GERMANIUM. APPLIED PHYSICS LETTERS, 64 (25). pp. 3470-3472. ISSN 0003-6951
Full text not available from this repository.Abstract
We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to less-than-or-equal-to 13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950-degrees-C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V-1 s-1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | APPLIED PHYSICS LETTERS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 0003-6951 |
| Date: | 20 June 1994 |
| Volume: | 64 |
| Number: | 25 |
| Number of Pages: | 3 |
| Page Range: | pp. 3470-3472 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/20598 |
Data sourced from Thomson Reuters' Web of Knowledge
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