VERY HIGH 2-DIMENSIONAL HOLE GAS MOBILITIES IN STRAINED SILICON-GERMANIUM
UNSPECIFIED (1994) VERY HIGH 2-DIMENSIONAL HOLE GAS MOBILITIES IN STRAINED SILICON-GERMANIUM. APPLIED PHYSICS LETTERS, 64 (25). pp. 3470-3472. ISSN 0003-6951Full text not available from this repository.
We report on the growth by solid source MBE and characterization of remote doped Si/SiGe/Si two-dimensional hole gas structures. It has been found that by reducing the Ge composition to less-than-or-equal-to 13% and limiting the thickness of the alloy layer, growth temperatures can be increased up to 950-degrees-C for these structures while maintaining good structural integrity and planar interfaces. Record mobilities of 19 820 cm2 V-1 s-1 at 7 K were obtained in normal structures. Our calculations suggest that alloy scattering is not important in these structures and that interface roughness and interface charge scattering limit the low temperature mobilities.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Date:||20 June 1994|
|Number of Pages:||3|
|Page Range:||pp. 3470-3472|
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