THERMOELECTRIC COEFFICIENTS OF SILICON MOSFETS IN QUANTIZING MAGNETIC-FIELD
UNSPECIFIED (1994) THERMOELECTRIC COEFFICIENTS OF SILICON MOSFETS IN QUANTIZING MAGNETIC-FIELD. COMMUNICATIONS IN THEORETICAL PHYSICS, 21 (1). pp. 1-8. ISSN 0253-6102Full text not available from this repository.
The phonon drag and electron diffusion contribution to the tensor M double arrow pointing right which determines the heat flux U over arrow pointing right = M double arrow pointing right . E over arrow pointing right is calculated for a silicon MOSFETS in a perpendicular magnetic field B over arrow pointing right. We used nearly the same theoretical formalism as Ref. , but improvements are made in several respects. First of all the dielectric function of Fermi-Thomas approximation which has been proved to result in overscreening of the interaction is replaced by rigorous Lindhard-type dielectric function to take account of the screening between electrons and phonons. Secondly the contributions of localized electrons are separated from those of the free state electrons which are the only part that contributes to both conductivity tensor and magnetothermopower tensor. The calculated M(yx) and S(xx) reveal magneto-oscillations originating from oscillations in the density of states at the Fermi level. At T = 5.02 K, our new results show that the diffusion components of thermopower are negligibly small compared with those due to phonon drag. All the theoretical values of M(yx), S(xx) and S(yx) are in accordance with the experimental data better than previous theoretical results.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||COMMUNICATIONS IN THEORETICAL PHYSICS|
|Publisher:||HUAZHONG UNIV SCI TECH PRESS|
|Date:||30 January 1994|
|Number of Pages:||8|
|Page Range:||pp. 1-8|
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