UNSPECIFIED (1993) PHOTOLUMINESCENCE FROM SI/SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES. In: 3rd International Conference on Optics of Excitons in Confined Systems, UNIV MONTPELLIER II, MONTPELLIER, FRANCE, AUG 30-SEP 02, 1993. Published in: JOURNAL DE PHYSIQUE IV, 3 (C5). pp. 119-122.

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Abstract

This paper reports a low temperature photoluminescence study of the optical properties of a series of dry etched free standing strained layer Si/Si0.87Ge0.13 multiple quantum well wires with lateral dimensions between 40nm and 500nm. The results show that dry etching induces partial strain relaxation. An enhanced electron-hole droplets emission from the Si layers with reducing wire width was observed due to both the extra surface roughness introduced during the etching process, which accelerates the nucleation of the droplets formation, and the effect of lateral confinement. A new feature at 1.131eV at 4K related to unknown impurity states located at the heterointerfaces was also detected.

Item Type:	Conference Item (UNSPECIFIED)
Subjects:	Q Science > QC Physics
Journal or Publication Title:	JOURNAL DE PHYSIQUE IV
Publisher:	EDITIONS PHYSIQUE
ISSN:	1155-4339
Date:	October 1993
Volume:	3
Number:	C5
Number of Pages:	4
Page Range:	pp. 119-122
Publication Status:	Published
Title of Event:	3rd International Conference on Optics of Excitons in Confined Systems
Location of Event:	UNIV MONTPELLIER II, MONTPELLIER, FRANCE
Date(s) of Event:	AUG 30-SEP 02, 1993
URI:	http://wrap.warwick.ac.uk/id/eprint/20812

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