EFFECTIVE-MASS AND QUANTUM LIFETIME IN A SI/SI0.87GE0.13/SI 2-DIMENSIONAL HOLE GAS
UNSPECIFIED (1994) EFFECTIVE-MASS AND QUANTUM LIFETIME IN A SI/SI0.87GE0.13/SI 2-DIMENSIONAL HOLE GAS. APPLIED PHYSICS LETTERS, 64 (3). pp. 357-359. ISSN 0003-6951Full text not available from this repository.
Measurements of Shubnikov de Haas oscillations in the temperature range 0.3-2 K have been used to determine an effective mass of 0.23 m0 in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. This value is in agreement with theoretical predictions and with that obtained from cyclotron resonance measurements. The ratio of the transport time to the quantum lifetime is found to be 0.8. It is concluded that the 4 K hole mobility of 11 000 cm2 V-1 s-1 at a carrier sheet density of 2.2 x 10(11) cm-2 is limited by interface roughness and short-range interface charge scattering.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Date:||17 January 1994|
|Number of Pages:||3|
|Page Range:||pp. 357-359|
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