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EFFECTIVE-MASS AND QUANTUM LIFETIME IN A SI/SI0.87GE0.13/SI 2-DIMENSIONAL HOLE GAS

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UNSPECIFIED (1994) EFFECTIVE-MASS AND QUANTUM LIFETIME IN A SI/SI0.87GE0.13/SI 2-DIMENSIONAL HOLE GAS. APPLIED PHYSICS LETTERS, 64 (3). pp. 357-359.

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Abstract

Measurements of Shubnikov de Haas oscillations in the temperature range 0.3-2 K have been used to determine an effective mass of 0.23 m0 in a Si/Si0.87Ge0.13/Si two-dimensional hole gas. This value is in agreement with theoretical predictions and with that obtained from cyclotron resonance measurements. The ratio of the transport time to the quantum lifetime is found to be 0.8. It is concluded that the 4 K hole mobility of 11 000 cm2 V-1 s-1 at a carrier sheet density of 2.2 x 10(11) cm-2 is limited by interface roughness and short-range interface charge scattering.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: APPLIED PHYSICS LETTERS
Publisher: AMER INST PHYSICS
ISSN: 0003-6951
Official Date: 17 January 1994
Dates:
DateEvent
17 January 1994UNSPECIFIED
Volume: 64
Number: 3
Number of Pages: 3
Page Range: pp. 357-359
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

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