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COULOMB-BLOCKADE IN SILICON-BASED STRUCTURES AT TEMPERATURES UP TO 50-K
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UNSPECIFIED. (1993) COULOMB-BLOCKADE IN SILICON-BASED STRUCTURES AT TEMPERATURES UP TO 50-K. APPLIED PHYSICS LETTERS, 63 (5). pp. 631-632. ISSN 0003-6951
Full text not available from this repository.Abstract
Coulomb blockade has been observed in the current-voltage characteristics of structures fabricated in silicon germanium delta-doped material at temperatures up to 50 K. This is consistent with the estimated effective tunnel capacitance of 10 aF which is significantly smaller than the reported capacitances of tunnel junctions made from Al or GaAs/AlGaAs heterostructures.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Journal or Publication Title: | APPLIED PHYSICS LETTERS |
| Publisher: | AMER INST PHYSICS |
| ISSN: | 0003-6951 |
| Date: | 2 August 1993 |
| Volume: | 63 |
| Number: | 5 |
| Number of Pages: | 2 |
| Page Range: | pp. 631-632 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/21167 |
Data sourced from Thomson Reuters' Web of Knowledge
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