UNSPECIFIED. (1993) OPTICAL-PROPERTIES OF SI/SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES. APPLIED PHYSICS LETTERS, 63 (4). pp. 497-499. ISSN 0003-6951

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Abstract

Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low-energy broadband emission at around 0.8 eV and other features normally observable in photoluminescence measurements, fabrication process induced strain relaxation and enhanced electron-hole droplets emission together with a new feature at 1. 131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	APPLIED PHYSICS LETTERS
Publisher:	AMER INST PHYSICS
ISSN:	0003-6951
Date:	26 July 1993
Volume:	63
Number:	4
Number of Pages:	3
Page Range:	pp. 497-499
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/21195

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