OPTICAL-PROPERTIES OF SI/SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES
UNSPECIFIED. (1993) OPTICAL-PROPERTIES OF SI/SI0.87GE0.13 MULTIPLE-QUANTUM-WELL WIRES. APPLIED PHYSICS LETTERS, 63 (4). pp. 497-499. ISSN 0003-6951Full text not available from this repository.
Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low-energy broadband emission at around 0.8 eV and other features normally observable in photoluminescence measurements, fabrication process induced strain relaxation and enhanced electron-hole droplets emission together with a new feature at 1. 131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||APPLIED PHYSICS LETTERS|
|Publisher:||AMER INST PHYSICS|
|Date:||26 July 1993|
|Number of Pages:||3|
|Page Range:||pp. 497-499|
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