UNSPECIFIED (1993) THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI/SI1-YGEY/SI HETEROJUNCTIONS. [Journal Item]

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Abstract

The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0 < y < 0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.

Item Type:	Journal Item
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0268-1242
Date:	July 1993
Volume:	8
Number:	7
Number of Pages:	3
Page Range:	pp. 1487-1489
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/21217

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