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THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI/SI1-YGEY/SI HETEROJUNCTIONS
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UNSPECIFIED (1993) THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI/SI1-YGEY/SI HETEROJUNCTIONS. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (7). pp. 1487-1489.
Research output not available from this repository, contact author.Abstract
The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0 < y < 0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.
| Item Type: | Journal Item | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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| Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
| Publisher: | IOP PUBLISHING LTD | ||||
| ISSN: | 0268-1242 | ||||
| Official Date: | July 1993 | ||||
| Dates: |
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| Volume: | 8 | ||||
| Number: | 7 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | pp. 1487-1489 | ||||
| Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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