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THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI/SI1-YGEY/SI HETEROJUNCTIONS

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UNSPECIFIED (1993) THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI/SI1-YGEY/SI HETEROJUNCTIONS. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (7). pp. 1487-1489.

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Abstract

The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0 < y < 0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.

Item Type: Journal Item
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Journal or Publication Title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher: IOP PUBLISHING LTD
ISSN: 0268-1242
Official Date: July 1993
Dates:
DateEvent
July 1993UNSPECIFIED
Volume: 8
Number: 7
Number of Pages: 3
Page Range: pp. 1487-1489
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

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