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THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI/SI1-YGEY/SI HETEROJUNCTIONS
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UNSPECIFIED (1993) THE DETERMINATION OF VALENCE-BAND DISCONTINUITIES AND INTERFACE CHARGE-DENSITIES IN SI/SI1-YGEY/SI HETEROJUNCTIONS. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 8 (7). pp. 1487-1489. ISSN 0268-1242
Full text not available from this repository.Abstract
The valence band offsets in Si/Si1-yGey/Si strained-layer heterostructures with 0 < y < 0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.
| Item Type: | Journal Item |
|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
| Publisher: | IOP PUBLISHING LTD |
| ISSN: | 0268-1242 |
| Date: | July 1993 |
| Volume: | 8 |
| Number: | 7 |
| Number of Pages: | 3 |
| Page Range: | pp. 1487-1489 |
| Publication Status: | Published |
| URI: | http://wrap.warwick.ac.uk/id/eprint/21217 |
Data sourced from Thomson Reuters' Web of Knowledge
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