UNSPECIFIED (1993) DIFFUSION OF DELTA-DOPED BORON IN SILICON FOLLOWING OXIDATION. ELECTRONICS LETTERS, 29 (3). pp. 263-264. ISSN 0013-5194

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Abstract

Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing.

Item Type:	Journal Article
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Journal or Publication Title:	ELECTRONICS LETTERS
Publisher:	IEE-INST ELEC ENG
ISSN:	0013-5194
Date:	4 February 1993
Volume:	29
Number:	3
Number of Pages:	2
Page Range:	pp. 263-264
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/21349

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