UNSPECIFIED (1993) OBSERVATION OF NOVEL TRANSPORT PHENOMENA IN A SI0.8GE0.2 2-DIMENSIONAL HOLE GAS. PHYSICAL REVIEW B, 47 (15). pp. 10016-10019. ISSN 0163-1829

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Abstract

We report measurements of the magnetoresistance and Hall coefficient of a two-dimensional hole gas defined at a remote-doped Si/Si0.8Ge0.2 heterojunction. In addition to the usual quantum interference and interaction corrections, one can clearly resolve effects relating to the temperature dependence of the static dielectric function, strain-induced suppression of spin-orbit scattering, and anisotropy of the hole g factor. A number of issues worthy of further theoretical study are suggested.

Item Type:	Journal Item
Subjects:	Q Science > QC Physics
Journal or Publication Title:	PHYSICAL REVIEW B
Publisher:	AMERICAN PHYSICAL SOC
ISSN:	0163-1829
Date:	15 April 1993
Volume:	47
Number:	15
Number of Pages:	4
Page Range:	pp. 10016-10019
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/21370

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