UNSPECIFIED (1993) HIGH HOLE MOBILITIES IN A P-TYPE MODULATION-DOPED SI/SI0.87GE0.13/SI HETEROSTRUCTURE. [Journal Item]

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Abstract

We report the highest 4 K hole mobility (9300 cm2 V-1 s-1) observed so far in a Si/SiGe/Si heterostructure. It is tentatively concluded that this improvement over previous results is due to a reduction in interface charge, and that the mobility is now limited by interface roughness scattering.

Item Type:	Journal Item
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics
Journal or Publication Title:	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher:	IOP PUBLISHING LTD
ISSN:	0268-1242
Date:	April 1993
Volume:	8
Number:	4
Number of Pages:	2
Page Range:	pp. 615-616
Publication Status:	Published
URI:	http://wrap.warwick.ac.uk/id/eprint/21376

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